BDV67A, b, c, d comset semiconductors 1/5 absolute maximum ratings symbol ratings value unit BDV67A 80 bdv67b 100 bdv67c 120 v ceo collector-emitter voltage bdv67d 150 v BDV67A 100 bdv67b 120 bdv67c 140 v cbo collector-base voltage bdv67d 160 v BDV67A bdv67b bdv67c v ebo emitter-base voltage bdv67d 5.0 v BDV67A bdv67b bdv67c i c bdv67d 16 BDV67A bdv67b bdv67c i c collector current i cm bdv67d 20 a BDV67A bdv67b bdv67c i b base current bdv67d 0.5 a BDV67A bdv67b bdv67c p t power dissipation @ t mb = 25 c bdv67d 200 watts BDV67A bdv67b bdv67c t j junction temperature bdv67d 150 BDV67A bdv67b bdv67c t s storage temperature bdv67d -65 to +150 c the bdv67 is epitaxial base darlington transistors for audio output stages and general amplifier and switching applications. the complementary is bdv66a, b, c, d. n n p p n n s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s
BDV67A, b, c, d comset semiconductors 2/5 thermal characteristics symbol ratings value unit BDV67A bdv67b bdv67c r thj-mb thermal resistance, junction to mounting base bdv67d 0.625 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ce =40 v BDV67A - - v ce =50 v bdv67b - - v ce =60 v bdv67c - - i ceo collector cutoff current v ce =75 v bdv67d - - 3 ma BDV67A - - bdv67b bdv67c i ebo emitter cutoff current v be =5 v bdv67d 5.0 ma BDV67A - - bdv67b bdv67c t j =25c, v cb = v cbo bdv67d 1 BDV67A - - bdv67b bdv67c i cbo collector-base cutoff current t j =150c, v cb = v cbo bdv67d 5 ma
BDV67A, b, c, d comset semiconductors 3/5 symbol ratings test condition(s) min typ m x unit v ce =3 v, i c =1 a - 3000 - v ce =3 v, i c =10 a 1000 - - h fe dc current gain v ce =3 v, i c =16 a - 1000 - - BDV67A bdv67b bdv67c v ce(sat) collector-emitter saturation voltage (*) i c =10 a, i b =40 ma bdv67d - - 2 v BDV67A bdv67b bdv67c v be base-emitter voltage(1&2) v ce =3 v, i c =10 a bdv67d - - 2,5 v BDV67A bdv67b bdv67c v f diode forward voltage i f =10 a bdv67d - - 3 v BDV67A bdv67b bdv67c c c i e =0 a, v cb =10v bdv67d - 300 - pf BDV67A bdv67b bdv67c t on bdv67d - 1 - BDV67A bdv67b bdv67c t off switching times v cc =12v, i c =-10 a i b1 =-i b2 =0.04 a bdv67d - 3.5 - s BDV67A bdv67b bdv67c f hfe v ce =-3 v, i c =-5 a bdv67d - 60 - khz (*) pulse width 300 s, duty cycle 2.0% (1) collector-emitter voltage limited et v ceci = v rated by an auxiliary circuit
BDV67A, b, c, d comset semiconductors 4/5 mechanical data case to-3p (to247) pin 1 : base pin 2 : collector pin 3 : emitter
BDV67A, b, c, d comset semiconductors 5/5 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice
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